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| STF26NM60N-H N-channel 600 V, 0.135 20 A MDmeshTM II Power MOSFET , in TO-220FP Features Type STF26NM60N-H VDSS 600 V RDS(on) max < 0.165 ID 20 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 3 2 Application TO-220FP Switching applications Description This series of devices implements second generation MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking 26NM60N Package TO-220FP Packaging Tube STF26NM60N-H(1) 1. The device meets ECOPACK(R) standards, an environmentally-friendly grade of products commonly referred to as "halogen-free" . See Section 4: Package mechanical data. January 2010 Doc ID 16964 Rev 1 1/12 www.st.com 12 Contents STF26NM60N-H Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuits .............................................. 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 Doc ID 16964 Rev 1 STF26NM60N-H Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (2) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor Value 600 25 20 (1) Unit V V A A A W 12.6 (1) 80 (1) PTOT dv/dt (3) VISO Tstg Tj 30 0.24 Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 C) Storage temperature Max. operating junction temperature 2500 -55 to 150 150 V/ns V C C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 20 A, di/dt 400 A/s, VDD 80% V(BR)DSS Table 3. Symbol Rthj-case Rthj-amb Tl Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose Value 4.17 62.5 300 Unit C/W C/W C Table 4. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting TJ=25 C, ID=IAS, VDD=50 V) Value 8.5 610 Unit A mJ Doc ID 16964 Rev 1 3/12 Electrical characteristics STF26NM60N-H 2 Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS = 0 VDS = Max rating VDS = Max rating, @125 C VGS = 20 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 10 A 2 3 Min. 600 1 10 0.1 4 Typ. Max. Unit V A A A V 0.135 0.165 Table 6. Symbol Ciss Coss Crss Coss eq. (1) Qg Qgs Qgd Rg Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Total gate charge Gate-source charge Gate-drain charge Gate input resistance Test conditions Min. Typ. 1800 115 1.1 310 60 8.5 30 2.8 Max. Unit pF pF pF pF nC nC nC VDS = 50 V, f = 1 MHz, VGS = 0 - - VGS = 0, VDS = 0 to 480 V VDD = 480 V, ID = 20 A, VGS = 10 V, (see Figure 15) f=1 MHz Gate DC Bias=0 Test signal level = 20 mV open drain - - - - - - 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS 4/12 Doc ID 16964 Rev 1 STF26NM60N-H Electrical characteristics Table 7. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 300 V, ID = 10 A RG = 4.7 VGS = 10 V (see Figure 14) Min. Typ. 13 25 85 50 Max. Unit ns ns ns ns - - Table 8. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 20 A, VGS = 0 ISD = 20 A, di/dt = 100 A/s VDD = 60 V (see Figure 16) ISD = 20 A, di/dt = 100 A/s VDD = 60 V, Tj = 150 C (see Figure 16) Test conditions Min 370 5.8 31.6 450 7.5 32.5 Typ. Max 20 80 1.5 Unit A A V ns C A ns C A - 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 s, duty cycle 1.5% Doc ID 16964 Rev 1 5/12 Electrical characteristics STF26NM60N-H 2.1 Figure 2. ID (A) Electrical characteristics (curves) Safe operating area AM03315v1 Figure 3. Thermal impedance 10 O p Li era m ite tion d by in t m his ax a R rea D S( on ) is 10s 100s 1ms 10ms 1 0.1 Tj=150C Tc=25C Sinlge pulse 0.01 0.1 1 10 100 VDS(V) Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. GFS (S) 8.5 Transconductance AM03318v1 Figure 7. RDS(on) () 0.16 TJ=25C 0.15 0.14 TJ=150C 0.13 0.12 Static drain-source on resistance AM03317v1 TJ=-50C ID=10A VGS=10V 6.5 4.5 2.5 0.11 0.5 0 5 10 15 20 0.1 ID(A) 0 5 10 15 20 ID(A) 6/12 Doc ID 16964 Rev 1 STF26NM60N-H Figure 8. VGS (V) 12 VDS 10 8 6 4 10 2 0 0 10 20 30 40 50 60 Qg(nC) 1 0.1 1 Electrical characteristics Capacitance variations AM03319v1 Gate charge vs gate-source voltage Figure 9. AM03320v1 VDD=480V ID=20A VGS C (pF) 10000 Ciss 1000 100 Coss Crss 10 100 VDS(V) Figure 10. Normalized gate threshold voltage vs temperature VGS(th) (norm) 1.1 AM03321v1 Figure 11. Normalized on resistance vs temperature RDS(on) (norm) 2.1 AM03322v1 1.0 1.7 0.9 1.3 0.8 0.9 0.7 -50 -25 0 25 50 75 100 TJ(C) 0.5 -50 -25 0 25 50 75 100 TJ(C) Figure 12. Source-drain diode forward characteristics VSD (V) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 ISD(A) TJ=25C TJ=150C AM03324v1 Figure 13. Normalized BVDSS vs temperature BVDSS (norm) 1.07 1.05 1.03 1.01 0.99 0.97 0.95 0.93 -50 -25 0 25 50 75 100 TJ(C) AM03323v1 TJ=-50C Doc ID 16964 Rev 1 7/12 Test circuits STF26NM60N-H 3 Test circuits Figure 15. Gate charge test circuit VDD 12V 2200 Figure 14. Switching times test circuit for resistive load 47k 100nF 1k RL VGS VD RG PW D.U.T. F 3.3 F VDD Vi=20V=VGMAX 2200 F IG=CONST 100 2.7k 47k PW 1k AM01469v1 D.U.T. VG AM01468v1 Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit A D G S B 25 D.U.T. A FAST DIODE B A L=100H B D G 3.3 F 1000 F L VD 2200 F 3.3 F VDD VDD ID RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 18. Unclamped inductive waveform V(BR)DSS VD Figure 19. Switching time waveform ton tdon tr toff tdoff tf 90% IDM 90% 10% ID VDD VDD 0 10% VDS 90% VGS AM01472v1 0 10% AM01473v1 8/12 Doc ID 16964 Rev 1 STF26NM60N-H Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 16964 Rev 1 9/12 Package mechanical data Table 9. Dim. Min. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia 28.6 9.8 2.9 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 Typ. STF26NM60N-H TO-220FP mechanical data mm Max. 4.6 2.7 2.75 0.7 1 1.70 1.70 5.2 2.7 10.4 30.6 10.6 3.6 16.4 9.3 3.2 Figure 20. TO-220FP drawing L7 E A B D Dia L6 L5 F1 F2 F H G1 G L2 L3 L4 7012510_Rev_K 10/12 Doc ID 16964 Rev 1 STF26NM60N-H Revision history 5 Revision history Table 10. Date 12-Jan-2010 Document revision history Revision 1 First release Changes Doc ID 16964 Rev 1 11/12 STF26NM60N-H Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12 Doc ID 16964 Rev 1 |
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